Silicon N Channel MOS FET High Speed Power Switching
H5N2510DL, H5N2510DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1110-0200 (Previous: ADE-208-1379) Rev.2...
Description
H5N2510DL, H5N2510DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1110-0200 (Previous: ADE-208-1379) Rev.2.00 Sep 07, 2005
Features
www.DataSheet4U.com Low
Low on-resistance drive current High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4 D 4 1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
G 1 2
3 S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 4
H5N2510DL, H5N2510DS
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal Impedance Channel temperature
www.DataSheet4U.com Storage temperature
Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 250 ±20 5 20 5 20 25 5 150 –55 to +150
Unit V V A A A A W °C/W °C °C
IDR (pulse) Note 2 Pch θ ch-c Tch Tstg
Note 1
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-...
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