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H5N2512CF

Renesas Technology

Silicon N Channel MOS FET High Speed Power Switching


Description
H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features Low on-resistance Low leakage current www.DataSheet4U.com High Speed Switching Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate ...



Renesas Technology

H5N2512CF

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