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H5N2802PF Dataheets PDF



Part Number H5N2802PF
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet H5N2802PF DatasheetH5N2802PF Datasheet (PDF)

H5N2802PF Silicon N Channel MOS FET High Speed Power Switching REJ03G1298-0100 Rev.1.00 Oct.05.2005 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain pe.

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H5N2802PF Silicon N Channel MOS FET High Speed Power Switching REJ03G1298-0100 Rev.1.00 Oct.05.2005 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 280 ±30 25 100 25 100 13 10.2 60 2.08 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.1.00, Oct.05.2005, page 1 of 3 H5N2802PF Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance www.DataSheet4U.com Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 280 — — 3.0 15 — — — — — — — — — — — — — — Typ — — — — 27 0.057 3600 450 32 50 90 120 75 72 18 24 0.88 200 1.4 Max — 1 ±0.1 4.0 — 0.066 — — — — — — — — — — 1.40 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC Test conditions ID = 10 mA, VGS = 0 VDS = 280 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 12.5 A, VDS = 10 V Note4 ID = 12.5 A, VGS = 10 V Note4 VDS = 25 V, VGS = 0, f = 1 MHz ID = 12.5 A, VGS = 10 V, RL = 11.2 Ω, Rg = 10 Ω VDD = 220 V, VGS = 10 V, ID = 25 A IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0, diF/dt = 100 A/µs Rev.1.00, Oct.05.2005, page 2 of 3 H5N2802PF Package Dimensions JEITA Package Code SC-93 RENESAS Code PRSS0003ZA-A Package Name TO-3PFM / TO-3PFMV MASS[Typ.] 5.2g Unit: mm 5.0 ± 0.3 5.5 ± 0.3 15.6 ± 0.3 φ3.2 + 0.4 – 0.2 www.DataSheet4U.com 4.0 ± 0.3 2.6 0.86 3.2 ± 0.3 1.6 0.86 0.66 5.45 ± 0.5 + 0.2 – 0.1 21.0 ± 0.5 5.0 ± 0.3 19.9 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 0.2 0.9 + – 0.1 5.45 ± 0.5 Ordering Information Part Name H5N2802PF-E Quantity 30 pcs Plastic magazine Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Oct.05.2005, page 3 of 3 www.DataSheet4U.com Keep safety first in your circuit designs! Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to informatio.


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