H5N3005LM

H5N3005LD, H5N3005LS, H5N3005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1315-0400 Rev.4.00 Nov 08, 2005 Features Low on-resistance Low leakage current www.DataSheet4U.com High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 4 RENESAS Package code: PRSS0004AE-C (Package name LDPAK(S)-(2)) 4 1 1 2 3 1 2 2 H5N3005LS 3 3 H5N3005LD D H5N3005LM G 1. Gate 2. Drain 3. Source 4. Drain S Rev.4.00, Nov 08, 2005, page 1 of 4 H5N3005LD, H5N3005LS, H5N3005LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance www.DataSheet4U.com Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 300 ±30 15 60 15 60 15 13.5 75 1.67 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capac...