Silicon N Channel MOS FET High Speed Power Switching
H5N5012P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0378-0200Z Rev.2.00 Jun.17.2004
Features
• Low on-r...
Description
H5N5012P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0378-0200Z Rev.2.00 Jun.17.2004
Features
Low on-resistance Low leakage current www.DataSheet4U.com High speed switching Built-in fast recovery diode
Outline
TO-3P
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAPNote3 Pch Note2 θch-c Tch Tstg
Note1
Ratings 500 ±30 25 100 25 7 150 0.833 150 –55 to +150
Unit V V A A A A W °C/W °C °C
Rev.2.00, Jun.17.2004, page 1 of 3
H5N5012P
Electrical Characteristics
(Ta = 25°C)
Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance www.DataSheet4U.com Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Co...
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