H5N5016PL

H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0200Z Rev.2.00 Jul.02.2004 Features Low on-resistance Low leakage current www.DataSheet4U.com High speed switching Built-in fast recovery diode Outline TO-3PL D G S 1 1. Gate 2. Drain (Flange) 3. Source 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 PchNote 2 θch-c Tch Tstg Ratings 500 ±30 50 200 50 200 10 5.5 250 0.5 150 –55 to +150 V V A A A A A mJ W °C /W °C °C Unit Rev.2.00, Jul.02.2004, page 1 of 6 H5N5016PL Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time www.DataSheet4U.com Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body–drain diode forward voltage Body–drain diode reverse recovery time Body–drain diode reve...