H7N0312LS

H7N0312LD, H7N0312LS, H7N0312LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1128-0300 (Previous: ADE-208-1572A) Rev.3.00 Apr 07, 2006 Features www.DataSheet4U.com R Low on-resistance DS (on) = 2.6 mΩ typ. Low drive current 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 2 1 3 2 3 H7N0312LD H7N0312LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N0312LM Rev.3.00 Apr 07, 2006 page 1 of 7 H7N0312LD, H7N0312LS, H7N0312LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature www.DataSheet4U.com Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 30 ±20 85 340 85 125 1.0 150 –55 to +150 Unit V V A A A W °C/W °C °C Pch θ ch-c Tch Tstg Note 2 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer c...