H7N0401LS

H7N0401LD, H7N0401LS, H7N0401LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1129-0500 (Previous: ADE-208-1527C) Rev.5.00 Apr 07, 2006 Features www.DataSheet4U.com R Low on-resistance DS (on) = 3.1 mΩ typ. 4.5 V gate drive devices High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 H7N0401LD H7N0401LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 D G 1 2 3 S H7N0401LM Rev.5.00 Apr 07, 2006 page 1 of 8 H7N0401LD, H7N0401LS, H7N0401LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.DataSheet4U.com Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 40 ±20 95 380 95 65 560 100 150 –55 to +150 Unit V V A A A A mJ W °C °C IAP Note 3 EAR Pch Tch Note 2 Note 3 Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitanc...