Silicon N-Channel MOSFET
H7N0602LD, H7N0602LS, H7N0602LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1130-0600 Rev.6.00 Oct 16, 20...
Description
H7N0602LD, H7N0602LS, H7N0602LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1130-0600 Rev.6.00 Oct 16, 2006
Features
Low on-resistance RDS (on) = 4.1 mΩ typ. www.DataSheet4U.com 4.5 V gate drive devices High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
H7N0602LD
H7N0602LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4 G
D
1
2
3
S
H7N0602LM
Rev.6.00 Oct 16, 2006 page 1 of 8
H7N0602LD, H7N0602LS, H7N0602LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.DataSheet4U.com Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 60 ±20 85 340 85 65 362 100 150 –55 to +150 Unit V V A A A A mJ W °C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance To...
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