H7N0608LM

www.DataSheet4U.com H7N0608LD, H7N0608LS, H7N0608LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0144-0100Z Rev.1.00 Oct.30.2003 Features Low on-resistance RDS(on) = 6.0 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK D 4 4 4 G 1 S 1 2 1 3 2 3 2 H7N0608LS H7N0608LM 3 H7N0608LD 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Oct.30.2003, page 1 of 11 H7N0608LD, H7N0608LS, H7N0608LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 70 280 70 40 137 80 150 –55 to +150 Unit V V A A A A mJ W °C °C EARNote3 Pch Tch Tstg Note2 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Oct.30.2003, page 2 of 11 H7N0608LD, H7N0608LS, H7N0608LM Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS 60 Typ — — — — — 6.0 8.0 75 6200 680 350 100 20 20 45 220 125 35 0.94 40 Max — — ±10 10 2.5 8.0 12 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns IF = 70 A, VGS = 0 IF = 70 A, VGS = 0 diF/dt = 100 A/µs Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 VNote1 ID = 35...