HAT1048R

HAT1048R Silicon P Channel Power MOS FET Power Switching ADE-208-1223A (Z) 2nd. Edition Jan. 2001 Features www.DataSheet4U.com Capable of -4.5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 6.0 mΩ typ (at VGS = -10V) Outline SOP-8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1048R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature www.DataSheet4U.com Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Note2 Note2 Note1 Ratings -30 ± 20 -16 -128 -16 2.5 50 150 – 55 to + 150 Unit V V A A A W ° C/W °C °C θ ch-a Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s HAT1048R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min -30 ± 20 — — -1.0 — — (18) — — — — — — — — — — — — Typ — — — — — (6.0) (9.5) (30) (5700) (1250) (710) (105) (14) (20) (25) (45) (140) (55) (-0.85) (50) Max — — ± 10 -1 -2.5 (7.0) (13.5) — — — — — — — — — — — (-1.10) — Unit V V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions I D = -10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, V DS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, I D = -1 mA I D = -8 A, VGS = -10 V Note3 I D = -8 A, VGS = -4.5V Note3 ...