HAT1096C

HAT1096C Silicon P Channel MOS FET Power Switching REJ03G1233-0400 Rev.4.00 Jan 26, 2006 Features Low on-resistance RDS(on) = 225 mΩ typ. (at VGS = –4.5 V) www.DataSheet4U.com Low drive current. 2.5 V gate drive devices. High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 D DD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to Source voltage VDSS –20 Gate to Source voltage VGSS ±12 Drain current ID –1 Note1 Drain peak current ID (pulse) –4 Body - Drain diode reverse drain current IDR –1 Note 2 Channel dissipation Pch 790 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C Unit V V A A A mW °C °C Rev.4.00 Jan 26, 2006 page 1 of 6 HAT1096C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance www.DataSheet4U.com Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS...