HAT1111C

HAT1111C Silicon P Channel MOS FET Power Switching REJ03G0446-0600 Rev.6.00 May 19.2005 Features Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) www.DataSheet4U.com Low drive current. 4.5 V gate drive devices. High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 S 1 2 3 4 5 DDD D 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID (pulse)Note1 IDR PchNote 2 Ratings –60 –20 / +10 –2 –8 –2 1.25 Unit V V A A A W °C °C Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), PW ≤ 5 s, Ta = 25°C Rev.6.00 May 19, 2005 page 1 of 6 HAT1111C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance www.DataSheet4U.com Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)...