HAT1139H

HAT1139H Silicon P Channel Power MOS FET Power Switching Features Capable of –4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 5 5 D D 1 234 2 3 G G S S 1 4 REJ03G1244-0200 Rev.2.00 Jun.22.2005 1, 4 Source 2, 3 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation : Tc = 25°C 3. 2 Drive operation : Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Pch Note3 Tch Tstg Ratings –30 –25 / +20 –30 –120 –30 15 30 150 –55 to +150 (Ta = 25°C) Unit V V A A A W W °C °C Rev.2.00 Jun. 22, 2005, page 1 of 6 HAT1139H Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Co...