Document
HAT2070R
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS (on) = 11 mΩ typ (at VGS = 10 V)
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65
4
G
1234
REJ03G1177-0400 (Previous: ADE-208-1226B)
Rev.4.00 Sep 07, 2005
5678 DDDD
SSS 123
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Rev.4.00 Sep 07, 2005 page 1 of 6
HAT2070R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
30
VGSS
±20
Drain current Drain peak current
ID
12
ID (pulse) Note 1
96
Body-drain diode reverse drain current
IDR
12
Channel dissipation
Pch Note 2
2.5
Channel to ambient thermal impedance
θ ch-a Note 2
50
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C) Unit
V V A A A W °C/W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time
Note: 3. Pulse test
Symbol V (BR) DSS V (BR) GSS
IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on)
tr td (off)
tf VDF trr
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
30
—
—
±20 —
—
—
— ±10
—
—
1
1.0 — 2.5
—
11
14
—
15
22
12
20
—
— 1400 —
— 340 —
— 190 —
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±16 V, VDS = 0
µA VDS = 30 V, VGS = 0
V VDS = 10 V, ID = 1 mA
mΩ ID = 6 A, VGS = 10 V Note 3
mΩ ID = 6 A, VGS = 4.5 V Note 3
S
ID = 6 A, VDS = 10 V Note 3
pF VDS = 10 V
pF VGS = 0
pF f = 1 MHz
—
23
—
nC VDD = 10 V
—
4
—
nC VGS = 10 V
—
4
—
nC ID = 12 A
—
15
—
ns VGS = 10 V, ID = 6 A
—
18
—
ns VDD ≅ 10 V
—
50
—
ns RL = 1.67 Ω
—
9
—
ns Rg = 4.7 Ω
—
0.85 1.10
V
IF = 12 A, VGS = 0 Note 3
—
50
—
ns IF = 12 A, VGS = 0
diF/dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 6
HAT2070R
Main Characteristics
Power vs. Temperature Derating 4.0
Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
Channel Dissipation Pch (W)
2.0
1.0
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current ID (A)
Typical Output Characteristics
50
10 V
4.5 V
40
Pulse Test 4V
3.5 V 30
20 VGS = 3 V
10
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
0.20 Pulse Test
0.16
0.12
ID = 10 A
0.08 5A
0.04 2A
0
0
4
8
12 16
20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (on) (V)
Rev.4.00 Sep 07, 2005 page 3 of 6
Drain to Source on State Resistance RDS (on) (mΩ)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area 500
100 10 1
OtlihmpisietearadretDiboaCynisORinpDPeSWra(ot=ino1)n0(1PmWms s1≤0100N1µos0ste)µ4s
0.1
Ta = 25°C
1 shot Pulse 0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V) Note 4: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
50
VDS = 10 V Pulse Test 40
30
20
10 Tc = 75°C
0
0
1
2
25°C
–25°C
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test
50
20
VGS = 4.5 V
10 10 V
5
2 1 0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
HAT2070R
Static Drain to Source on State Resistance RDS (on) (mΩ)
Static Drain to Source on State Resistance vs. Temperature
50 Pulse Test
40
30 ID = 2 A, 5 A 10 A
20
VGS = 4.5 V
10 10 V
2 A, 5 A, 10 A
0 –40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse Recovery Time
100
50
Reverse Recovery Time trr (ns)
Drain to Source Voltage VDS (V)
20
10 0.1 0.2
di / dt = 50 A / µs VGS = 0, Ta = 25°C
0.5 1 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
20
ID = 12 A
40
30 VDS
20
16 VGS
12
VDD = 25 V 10 V 8 5V
10
VDD = 25 V
4
10 V
5V
0
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Gate to Source Voltage VGS (V) Switching Time t (ns)
Capacitance C (pF)
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs. Drain Current
100
30
Tc = –25°C
10 75°C
3 25°C
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
Typical Capacitance vs. Drain to Source Voltage
3000 1000
300 100
Ciss Coss Crss
30
VGS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage .