DatasheetsPDF.com

HAT2070R Dataheets PDF



Part Number HAT2070R
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N-Channel Power MOSFET
Datasheet HAT2070R DatasheetHAT2070R Datasheet (PDF)

HAT2070R Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 11 mΩ typ (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 REJ03G1177-0400 (Previous: ADE-208-1226B) Rev.4.00 Sep 07, 2005 5678 DDDD SSS 123 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.4.00 Sep 07, 2005 page 1 of 6 HAT2070R Absolute Maximum Ratings Item Symb.

  HAT2070R   HAT2070R


Document
HAT2070R Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 11 mΩ typ (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 REJ03G1177-0400 (Previous: ADE-208-1226B) Rev.4.00 Sep 07, 2005 5678 DDDD SSS 123 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.4.00 Sep 07, 2005 page 1 of 6 HAT2070R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 30 VGSS ±20 Drain current Drain peak current ID 12 ID (pulse) Note 1 96 Body-drain diode reverse drain current IDR 12 Channel dissipation Pch Note 2 2.5 Channel to ambient thermal impedance θ ch-a Note 2 50 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C/W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr (Ta = 25°C) Min Typ Max Unit Test Conditions 30 — — ±20 — — — — ±10 — — 1 1.0 — 2.5 — 11 14 — 15 22 12 20 — — 1400 — — 340 — — 190 — V ID = 10 mA, VGS = 0 V IG = ±100 µA, VDS = 0 µA VGS = ±16 V, VDS = 0 µA VDS = 30 V, VGS = 0 V VDS = 10 V, ID = 1 mA mΩ ID = 6 A, VGS = 10 V Note 3 mΩ ID = 6 A, VGS = 4.5 V Note 3 S ID = 6 A, VDS = 10 V Note 3 pF VDS = 10 V pF VGS = 0 pF f = 1 MHz — 23 — nC VDD = 10 V — 4 — nC VGS = 10 V — 4 — nC ID = 12 A — 15 — ns VGS = 10 V, ID = 6 A — 18 — ns VDD ≅ 10 V — 50 — ns RL = 1.67 Ω — 9 — ns Rg = 4.7 Ω — 0.85 1.10 V IF = 12 A, VGS = 0 Note 3 — 50 — ns IF = 12 A, VGS = 0 diF/dt = 50 A/µs Rev.4.00 Sep 07, 2005 page 2 of 6 HAT2070R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3.0 Channel Dissipation Pch (W) 2.0 1.0 0 0 50 100 150 200 Ambient Temperature Ta (°C) Drain Current ID (A) Typical Output Characteristics 50 10 V 4.5 V 40 Pulse Test 4V 3.5 V 30 20 VGS = 3 V 10 0 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.20 Pulse Test 0.16 0.12 ID = 10 A 0.08 5A 0.04 2A 0 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (on) (V) Rev.4.00 Sep 07, 2005 page 3 of 6 Drain to Source on State Resistance RDS (on) (mΩ) Drain Current ID (A) Drain Current ID (A) Maximum Safe Operation Area 500 100 10 1 OtlihmpisietearadretDiboaCynisORinpDPeSWra(ot=ino1)n0(1PmWms s1≤0100N1µos0ste)µ4s 0.1 Ta = 25°C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Note 4: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics 50 VDS = 10 V Pulse Test 40 30 20 10 Tc = 75°C 0 0 1 2 25°C –25°C 3 4 5 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 VGS = 4.5 V 10 10 V 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current ID (A) HAT2070R Static Drain to Source on State Resistance RDS (on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 30 ID = 2 A, 5 A 10 A 20 VGS = 4.5 V 10 10 V 2 A, 5 A, 10 A 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time 100 50 Reverse Recovery Time trr (ns) Drain to Source Voltage VDS (V) 20 10 0.1 0.2 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0.5 1 2 5 10 20 Reverse Drain Current IDR (A) Dynamic Input Characteristics 50 20 ID = 12 A 40 30 VDS 20 16 VGS 12 VDD = 25 V 10 V 8 5V 10 VDD = 25 V 4 10 V 5V 0 0 0 8 16 24 32 40 Gate Charge Qg (nc) Gate to Source Voltage VGS (V) Switching Time t (ns) Capacitance C (pF) Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 100 30 Tc = –25°C 10 75°C 3 25°C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 1 3 10 30 100 Drain Current ID (A) 10000 Typical Capacitance vs. Drain to Source Voltage 3000 1000 300 100 Ciss Coss Crss 30 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage .


ICX226AL HAT2070R HAT2071R


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)