HAT2196C

HAT2196C Silicon N Channel MOS FET Power Switching REJ03G1235-0500 Rev.5.00 Jun. 13, 2005 Features Low on-resistance RDS(on) = 45 mΩ typ. (at VGS = 4.5 V) www.DataSheet4U.com Low drive current. High density mounting 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) Ratings 20 ±12 2.5 10 2.5 850 150 –55 to +150 Unit V V A A A mW °C °C Rev.5.00, Jun. 13, 2005, page 1 of 6 HAT2196C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance www.DataSheet4U.com Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) R...