C4824 2SC4824 Datasheet

C4824 Datasheet PDF, Equivalent


Part Number

C4824

Description

2SC4824

Manufacture

Sanyo

Total Page 4 Pages
PDF Download
Download C4824 Datasheet PDF


C4824
Ordering number:ENN4132
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1850/2SC4824
High Definition CRT
Display Video Output Applications
Applications
· High Definition CRT Display Video Output Applica-
tions, Wide-Band Amplifier.
www.DataSheetF4Ue.caotmures
· Adoption of FBET process.
· High Gain Bandwidth product (fT=400MHz).
· High breakdown voltage (VCEO=120V).
· Small reverse transfer capacitance and excellent
high-frequency characteristic :
Cre=1.7pF/NPN, 2.2pF/PNP.
· Usage of radial taping to meet automatic mounting.
Package Dimensions
unit:mm
2084B
[2SA1850/2SC4824]
4.5
10.5
1.9
1.2
2.6
1.4
1.2
1.6
0.5
123
0.5
( ) : 2SA1850
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.5
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()80V, IE=0
Emitter Cutoff Current
IEBO VEB=()2V, IC=0
DC Current Gain
hFE1
hFE2
VCE=()10V, IC=()10mA
VCE=()10V, IC=()100mA
* : The 2SA1850/2SC4824 are classified by 10mA hFE as follows :
Rank
D
E
F
hFE 60 to 120 100 to 200 160 to 320
1 : Emitter
2 : Collector
3 : Base
2.5 SANYO : FLP
Ratings
(–)120
(–)120
(–)3
(–)200
(–)400
1.3
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Ratings
min typ max
Unit
()0.1 µA
()1.0 µA
60* 320*
20
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82003TN (KT)/91098HA (KT)/5122MH (KOTO) No.4132–1/4

C4824
2SA1850/2SC4824
Continued from preceding page.
Parameter
Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
fT VCE=()10V, IC=()50mA
Cob VCB=()30V, f=1MHz
Cre VCB=()30V, f=1MHz
VCE(sat) IC=()30mA, IB=()3mA
VBE(sat) IC=()30mA, IB=()3mA
Ratings
min typ max
Unit
400 MHz
(2.8)
pF
2.1 pF
(2.2)
pF
1.7 pF
()1.0 V
()1.0 V
--100
2SA1850
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--80
--60
IC -- VCE
--1.0mA
--0.9mA
--0.8mA
--0.7mA
--0.6mA
--0.5mA
--40 --0.4mA
--0.3mA
--20
0
0
--240
--200
--0.2mA
--0.1mA
IB=0
--4 --8 --12 --16 --20
Collector-to-Emitter Voltage, VCE – V ITR04875
IC -- VBE
2SA1850
VCE= --10V
100
2SC4824
80
IC -- VCE
0.9mA 0.8mA
0.7mA
0.6mA
60
0.5mA
0.4mA
40
0.3mA
0.2mA
20
0.1mA
0 IB=0
0 4 8 12 16 20
Collector-to-Emitter Voltage, VCE – V ITR04876
IC -- VBE
240
2SC4824
VCE=10V
200
--160
160
--120
120
--80 80
--40
0
0
3
2
100
7
5
3
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE – V ITR04877
hFE -- IC
2SA1850
VCE= --10V
Ta=75°C
25°C
--25°C
10
7
5
2
3
5 7 --10
23
5 7 --100
23
Collector Current, IC – mA
ITR04879
40
0
0
2
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR04878
hFE -- IC
Ta=75°C
25°C
2SC4824
VCE=10V
--25°C
10
7
5
23
5 7 10
23
5 7 100
23
Collector Current, IC – mA
ITR04880
No.4132–2/4


Features Ordering number:ENN4132 PNP/NPN Epitaxi al Planar Silicon Transistors 2SA1850/ 2SC4824 High Definition CRT Display Vid eo Output Applications Applications · High Definition CRT Display Video Outpu t Applications, Wide-Band Amplifier. ww w.DataSheet4U.com Package Dimensions u nit:mm 2084B [2SA1850/2SC4824] 10.5 1.9 4.5 1.2 Features · Adoption of FBET process. · High Gain Bandwidth product (fT=400MHz). · High breakdown voltage (VCEO=120V). · Small reverse transfer capacitance and excellent high-frequen cy characteristic : Cre=1.7pF/NPN, 2.2p F/PNP. · Usage of radial taping to mee t automatic mounting. 2.6 1.4 1.2 1. 0 7.5 8.5 1.6 0.5 1 2 3 0.5 ( ) : 2 SA1850 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collec tor-to-Base Voltage Collector-to-Emitte r Voltage Emitter-to-Base Voltage Colle ctor Current Colletor Current (Pulse) C ollector Dissipation Junction Temperatu re Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.5 2.5 1 : Emitter 2 : Collecto.
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