Ordering number:ENN4132
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1850/2SC4824
High Definition CRT Display Video...
Ordering number:ENN4132
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1850/2SC4824
High Definition CRT Display Video Output Applications
Applications
· High Definition CRT Display Video Output Applications, Wide-Band Amplifier.
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Package Dimensions
unit:mm 2084B
[2SA1850/2SC4824]
10.5 1.9 4.5
1.2
Features
· Adoption of FBET process. · High Gain Bandwidth product (fT=400MHz). · High breakdown voltage (VCEO=120V). · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/
NPN, 2.2pF/
PNP. · Usage of radial taping to meet automatic mounting.
2.6 1.4
1.2
1.0 7.5
8.5
1.6 0.5 1 2 3
0.5
( ) : 2SA1850
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
2.5
2.5
1 : Emitter 2 : Collector 3 : Base SANYO : FLP
Ratings (–)120 (–)120 (–)3 (–)200 (–)400 1.3 150 –55 to +150
Unit V V V mA mA W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=(–)80V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)100mA 60* 20 Conditions Ratings min typ max (–)0.1 (–)1.0 320* Unit µA µA
* : The 2SA1850/2SC4824 are classified by 10mA hFE as follows :
Rank hFE D 60 to 120 E 100 to 200 ...
