SPU02N60S5

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPU02N60S5 SPD02N60S5 VDS RDS(on) ID PG-TO252 600 V 3 Ω 1.8 A PG-TO251 2 3 1 3 2 1 Type SPU02N60S5 SPD02N60S5 Package PG-TO251 PG-TO252 Ordering Code Q67040-S4226 Q67040-S4213 Marking 02N60S5 02N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Ptot Operating and storage temperature Tj , Tstg Value 1.8 1.1 3.2 50 0.07 1.8 ±20 ±30 25 -55... +150 Unit A mJ A V W °C Rev. 2.5 Page 1 2008-04-07 SPU02N60S5 SPD02N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 1.8 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s Symbol dv/dt Value 20 Unit V/ns Symbol RthJC RthJA RthJA Tsold Values Unit min. typ. max. - - 5 K/W - - ...