Preliminary Data
SIPMOS® Power Transistor
Features • N channel
•
SPD 08N10
Product Summary Drain source voltage Drain...
Preliminary Data
SIPMOS® Power
Transistor
Features N channel
SPD 08N10
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS RDS(on) ID
100 0.3 8.4
V Ω A
Enhancement mode rated
Avalanche rated
www.DataSheet4U.com dv/dt
Type SPD08N10 SPU08N10
Package P-TO252 P-TO251
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current
Value 8.4 5.4 33.6 30 4 6 ±20 40 -55... +175 55/150/56
Unit A
ID
TC = 25 ˚C TC = 100 ˚C
Pulsed drain current
IDpulse EAS EAR
dv/dt
TC = 25 ˚C
Avalanche energy, single pulse mJ
ID = 8.4 A, VDD = 25 V, R GS = 25 Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs V W ˚C
IS = 8.4 A, V DS = 80 V, di/dt = 200 A/µs
Gate source voltage Power dissipation
VGS Ptot Tj , Tstg
TC = 25 ˚C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
SPD 08N10
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded
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Symbol min.
Values typ. max. 3.1 100 75 50
Unit
RthJC RthJA RthJA
-
K/W
SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1)
Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Val...
