SPU08P06P

Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W · · · · www.DataSheet4U.com A Type SPD08P06P SPU08P06P Package P-TO252 Ordering Code Q67040-S4153 Pin 1 G PIN 2/4 D PIN 3 S P-TO251-3-1 Q67040-S4154 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -8.8 -6.2 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -35.2 70 4.2 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I D = -8.8 A , VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -8.8 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 42 -55...+175 55/175/56 V W °C T C = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 1999-11-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.DataSheet4U.com resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. - SPD08P06P SPU08P06P Unit max. 3.6 100 75 50 K/W RthJC RthJA RthJA - Electrical Characteristics , at T j = 25 °C, unless otherwise specified Para...