STP80NF12FP

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP N-CHANNEL 120V-0.013Ω-80A TO-220/TO-247/TO-220FP/D²PAK STripFET™ II POWER MOSFET TYPE STB80NF12 STP80NF12 STP80NF12FP STW80NF12 s s s s VDSS 120 V 120 V 120 V 120 V RDS(on) <0.018 <0.018 <0.018 <0.018 Ω Ω Ω Ω 80 80 80 80 ID A(*) A(*) A(*) A(*) TO-220 TO-220FP 3 1 2 1 2 3 s TYPICAL RDS(on) = 0.013Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) TO-247 D²PAK TO-263 (Suffix “T4”) 3 1 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM() Ptot dv/dt (1) EAS (2) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand V...