STTH200R04TV diode Datasheet

STTH200R04TV Datasheet PDF, Equivalent


Part Number

STTH200R04TV

Description

Ultrafast recovery diode

Manufacture

STMicroelectronics

Total Page 7 Pages
Datasheet
Download STTH200R04TV Datasheet


STTH200R04TV
STTH200R04TV
Ultrafast recovery diode
Main product characteristics
www.DataSheet4U.com
IF(AV)
VRRM
Tj
VF (typ)
trr (typ)
2 x 100 A
400 V
150° C
0.87 V
40 ns
Features and benefits
Ultrafast
Very low switching losses
High frequency and high pulsed current
operation
Low leakage current
Insulated package:
– ISOTOP
Electrical insulation = 2500 VRMS
Capacitance = 45 pF
Description
The STTH200R04TV series uses ST's new 400 V
planar Pt doping technology. The STTH200R04 is
specially suited for switching mode base drive and
transistor circuits, such as welding equipment.
A1 K1
A2 K2
A1
K1
A2
K2
ISOTOP
STTH200R04TV1
Order codes
Part Number
STTH200R04TV1
Marking
STTH200R04TV1
March 2007
Rev 1
1/7
www.st.com
7

STTH200R04TV
Characteristics
1 Characteristics
STTH200R04TV
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM
VRSM
IF(RMS)
www.DataSheet4U.comIF(AV)
IFRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Per diode
Average forward current, δ = 0.5
Per diode
Per package
Repetitive peak forward current
tp = 5 µs, F = 1 kHz square
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
Tc = 80° C
Tc = 65° C
400
400
150
100
200
2000
1000
-65 to + 150
150
V
V
A
A
A
A
A
°C
°C
Table 2. Thermal parameters
Symbol
Parameter
Rth(j-c)
Rth(c)
Junction to case
Per diode
Total
Coupling thermal resistance
Value
0.50
0.30
0.1
Unit
° C/W
When the diodes are used simultaneously:
ΔTj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 100° C
VR = VRRM
IF = 100 A
Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.8 x IF(AV) + 0.003 x IF2(RMS)
80
µA
80 800
1.35
0.95 1.2
V
0.87 1.1
2/7


Features STTH200R04TV Ultrafast recovery diode Ma in product characteristics IF(AV) www.D ataSheet4U.com A1 K1 2 x 100 A 400 V 150° C 0.87 V 40 ns VRRM Tj VF (typ) trr (typ) A2 K2 A1 Features and be nefits ■ ■ ■ ■ ■ K1 A2 K2 IS OTOP STTH200R04TV1 Ultrafast Very low switching losses High frequency and hig h pulsed current operation Low leakage current Insulated package: – ISOTOP E lectrical insulation = 2500 VRMS Capaci tance = 45 pF Order codes Part Number Marking STTH200R04TV1 STTH200R04TV1 De scription The STTH200R04TV series uses ST's new 400 V planar Pt doping technol ogy. The STTH200R04 is specially suited for switching mode base drive and tran sistor circuits, such as welding equipm ent. March 2007 Rev 1 1/7 www.st.com 7 Characteristics STTH200R04TV 1 Ta ble 1. Symbol VRRM VRSM IF(RMS) www.Dat aSheet4U.com I F(AV) Characteristics A bsolute ratings (limiting values per di ode at 25° C, unless otherwise specifi ed) Parameter Repetitive peak reverse voltage Non repetitive peak reverse vol.
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