1-18 GHz WIDE BAND AMPLIFIER
CHA3023
RoHS COMPLIANT
1-18 GHz WIDE BAND AMPLIFIER
GaAs Monolithic Microwave IC
www.DataSheet4U.com
Description
The ...
Description
CHA3023
RoHS COMPLIANT
1-18 GHz WIDE BAND AMPLIFIER
GaAs Monolithic Microwave IC
www.DataSheet4U.com
Description
The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form.
15 10 Gain & RLoss 5 0 -5 -10 -15 -20 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) dBS11 dBS22 dBS21
Main Features
■ Broadband performances : 1-18 GHz
■ 14dB gain ■ 3dB typical Low Noise Figure ■ ±0.7 dB gain flatness ■ Die size : 2.15 X 1.42 X 0.10 mm
On wafer measurements
Main Characteristics
Tamb. = 25° C Symbol Fop G NF Id Parameter Operating frequency range Small signal Gain Noise figure Bias current 95 Min 1 12.5 14 4 dB mA Typ Max 18 Unit GHz
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
DSCHA30235263 - 20 sep 05
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3023
1-18GHz Wide Band Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25° C, Vd=5V, Vg1=-0.3V tuned to have Id=95mA Vg2=+2V
Symbol Fop G
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Parameter Operating frequency range Small signal gain F= 1 to 3GHz F= 3 to 18GHz Small signal gain flatness Output power at 1dB gain compression In...
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