CHA3023 AMPLIFIER Datasheet

CHA3023 Datasheet PDF, Equivalent


Part Number

CHA3023

Description

1-18 GHz WIDE BAND AMPLIFIER

Manufacture

United Monolithic Semiconductors

Total Page 8 Pages
Datasheet
Download CHA3023 Datasheet


CHA3023
CHA3023
RoHS COMPLIANT
1-18 GHz WIDE BAND AMPLIFIER
GaAs Monolithic Microwave IC
www.DataSheet4U.com
Description
The CHA3023 is a travelling wave amplifier
using cascode FET. It is designed for a wide
range of applications.
The circuit is manufactured with a PHEMT
process of 0.25µm gate length, via holes
through the substrate and air bridges and it
is available in die form.
Main Features
Broadband performances : 1-18 GHz
14dB gain
3dB typical Low Noise Figure
±0.7 dB gain flatness
Die size : 2.15 X 1.42 X 0.10 mm
15
10 dBS21
5
0
-5
-10
dBS11
-15
dBS22
-20
1 3 5 7 9 11 13 15 17 19
Frequency (GHz)
On wafer measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal Gain
NF Noise figure
Id Bias current
Min Typ Max Unit
1 18 GHz
12.5 14
4 dB
95 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
DSCHA30235263 - 20 sep 05
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

CHA3023
CHA3023
1-18GHz Wide Band Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd=5V,
Vg1=-0.3V tuned to have Id=95mA
Vg2=+2V
Symbol
Parameter
Fop Operating frequency range
G
www.DataSheet4U.com
Small signal gain
F= 1 to 3GHz
F= 3 to 18GHz
G Small signal gain flatness
P1dB Output power at 1dB gain compression
VSWRin Input VSWR
VSWRout Output VSWR
NF Noise Figure
F= 1 to 4GHz
F= 1 to 18GHz
Vdc DC voltage
Vd
Vg1
Vg2
Id Bias current
Min Typ Max Unit
1 18 GHz
11.5
12.5
15
13
14
± 0.7
17
2.2:1
2.2:1
dB
dB
dB
dBm
4 6 dB
2.5 4 dB
+5 V
-0.3 V
+2 V
95 mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg1
Vg2
Pin
Pin
Top
Tstg
Parameter
Drain to ground bias voltage
Drain current
Gate to ground bias voltage
Gate to ground bias voltage
Maximun peak input power overdrive (2)
Maximum input CW power
Operating temperature
Storage temperature range
Min.
0
-1.5
0
-40
-55
Max.
6.5
110
0.3
3
+15
+10
85
125
Unit
V
mA
V
V
dBm
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s
DSCHA30235263 - 20 sep 05
2/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09


Features CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BA ND AMPLIFIER GaAs Monolithic Microwave IC www.DataSheet4U.com Description Th e CHA3023 is a travelling wave amplifie r using cascode FET. It is designed for a wide range of applications. The circ uit is manufactured with a PHEMT proces s of 0.25µm gate length, via holes thr ough the substrate and air bridges and it is available in die form. 15 10 Gai n & RLoss 5 0 -5 -10 -15 -20 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) dBS11 dB S22 dBS21 Main Features ■ Broadband performances : 1-18 GHz ■ 14dB gain ■ 3dB typical Low Noise Figure ■ ± 0.7 dB gain flatness ■ Die size : 2.1 5 X 1.42 X 0.10 mm On wafer measuremen ts Main Characteristics Tamb. = 25° C Symbol Fop G NF Id Parameter Operating frequency range Small signal Gain Nois e figure Bias current 95 Min 1 12.5 14 4 dB mA Typ Max 18 Unit GHz ESD Protec tion : Electrostatic discharge sensitiv e device. Observe handling precautions ! DSCHA30235263 - 20 sep 05 1/8 Specifications subject to change without .
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