LH5316P00B

LH5316P00B FEATURES 2,097,152 × 8 bit organization (Byte mode: BYTE = VIL) 1,048,576 × 16 bit organization (Word mode: BYTE = VIH) Access time: 120 ns (MAX.) Supply current: – Operating: 70 mA (MAX.) – Standby: 100 µA (MAX.) TTL compatible I/O Three-state output Single +5 V power supply Static operation Package: 44-pin, 600-mil SOP Item related with COCOM regulation: – Non programmable – Not designed or rated as radiation hardened – CMOS process (P type silicon substrate) DESCRIPTION The LH5316P00B is a 16M-bit mask-programmable ROM organized as 2,097,152 × 8 bits (Byte mode) or 1,048,576 × 16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology. CMOS 16M (2M × 8/1M × 16) MROM PIN CONNECTIONS 44-PIN SOP TOP VIEW NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE D0 D8 D1 D9 D2 D10 D3 D11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE GND D15/A-1 (NOTE) D7 D14 D6 D13 D5 D12 D4 VCC NOTE: The D15/A-1 pin becomes LSB address input (A-1) when the BYTE pin is set to be LOW in byte mode and data output (D15) when set to be HIGH in word mode. The input state of BYTE pin can not be changed during operation. The BYTE pin must be set to either GND or VCC. 5316P00B-1 Figure 1. Pin Connections 1 LH5316P00B CMOS 16M (2M x 8/1M x 16) MROM A19 43 A18 2 A17 3 A16 34 A15 35 ADDRESS DECO...