1GW3B2AN6 Memory Datasheet

1GW3B2AN6 Datasheet PDF, Equivalent


Part Number

1GW3B2AN6

Description

NAND Flash Memory

Manufacture

ST Microelectronics

Total Page 30 Pages
Datasheet
Download 1GW3B2AN6 Datasheet


1GW3B2AN6
NAND512-B, NAND01G-B NAND02G-B
NAND04G-B NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
www.DataSheet4U.com
– Up to 8 Gbit memory array
– Up to 64Mbit spare area
– Cost effective solutions for mass storage
applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
PAGE SIZE
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
BLOCK SIZE
– x8 device: (128K + 4K spare) Bytes
– x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
– Random access: 25µs (max)
– Sequential access: 50ns (min)
– Page program time: 300µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
CACHE PROGRAM AND CACHE READ
MODES
– Internal Cache Register to improve the
program and read throughputs
FAST BLOCK ERASE
– Block erase time: 2ms (typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’
– for simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP
– Boot from NAND support
SERIAL NUMBER OPTION
Figure 1. Packages
TSOP48 12 x 20mm
USOP48 12 x 17 x 0.65mm
FBGA
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
LFBGA63 9.5 x 12 x 1.4mm
DATA PROTECTION
– Hardware and Software Block Locking
– Hardware Program/Erase locked during
Power transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
RoHS COMPLIANCE
– Lead-Free Components are Compliant
with the RoHS Directive
DEVELOPMENT TOOLS
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
February 2005
1/59
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

1GW3B2AN6
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Table 1. Product List
Reference
NAND512-B
www.DataSheet4U.com NAND01G-B
NAND02G-B
NAND04G-B
NAND08G-B
Part Number
NAND512R3B
NAND512W3B
NAND512R4B
NAND512W4B
NAND01GR3B
NAND01GW3B
NAND01GR4B
NAND01GW4B
NAND02GR3B
NAND02GW3B
NAND02GR4B
NAND02GW4B
NAND04GR3B
NAND04GW3B
NAND04GR4B
NAND04GW4B
NAND08GR3B
NAND08GW3B
NAND08GR4B
NAND08GW4B
2/59


Features NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY www.DataSheet4U. com ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH D ENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spar e area – Cost effective solutions for mass storage applications NAND INTERFA CE – x8 or x16 bus width – Multiple xed Address/ Data – Pinout compatibil ity for all densities SUPPLY VOLTAGE 1.8V device: VDD = 1.7 to 1.95V – 3 .0V device: VDD = 2.7 to 3.6V PAGE SIZE – x8 device: (2048 + 64 spare) Bytes – x16 device: (1024 + 32 spare) Word s BLOCK SIZE – x8 device: (128K + 4K spare) Bytes – x16 device: (64K + 2K spare) Words PAGE READ / PROGRAM – Ra ndom access: 25µs (max) – Sequential access: 50ns (min) – Page program ti me: 300µs (typ) COPY BACK PROGRAM MODE – Fast page copy without external buffering CACHE PROGRAM AND CACHE READ MODES – Internal Cache Register to improve the pr.
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