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1GW3B2AN6 Datasheet, Equivalent, Flash Memory.NAND Flash Memory NAND Flash Memory |
　
　
　
| Part | 1GW3B2AN6 |
|---|---|
| Description | NAND Flash Memory |
| Feature | NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1. 8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY www. DataSheet4U. com â– â– â– â– â– â– â– â– â– â– â– â– â– â– HIGH D ENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spar e area – Cost effective solutions for mass storage applications NAND INTERFA CE – x8 or x16 bus width – Multiple xed Address/ Data – Pinout compatibil ity for all densities SUPPLY VOLTAGE †“ 1. 8V device: VDD = 1. 7 to 1. 95V – 3 . 0V device: VDD = 2. 7 to 3. 6V PAGE SIZE – x8 device: (2048 . |
| Manufacture | ST Microelectronics |
| Datasheet |
| Part | 1GW3B2AN6 |
|---|---|
| Description | NAND Flash Memory |
| Feature | NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1. 8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY www. DataSheet4U. com â– â– â– â– â– â– â– â– â– â– â– â– â– â– HIGH D ENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spar e area – Cost effective solutions for mass storage applications NAND INTERFA CE – x8 or x16 bus width – Multiple xed Address/ Data – Pinout compatibil ity for all densities SUPPLY VOLTAGE †“ 1. 8V device: VDD = 1. 7 to 1. 95V – 3 . 0V device: VDD = 2. 7 to 3. 6V PAGE SIZE – x8 device: (2048 . |
| Manufacture | ST Microelectronics |
| Datasheet |
　
　
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