KMM466F213CS2-L

DRAM MODULE KMM466F203CS2-L KMM466F213CS2-L www.DataSheet4U.com 2Mx64 SODIMM (2MX8 Base) Revision 2.0 November 1997 -1- Rev. 2.0 (Nov. 1997) DRAM MODULE Revision History Version 2.0 (November 1997) Changed module PCB from 6-Layer to 4-Layer. KMM466F203CS2-L KMM466F213CS2-L www.DataSheet4U.com -2- Rev. 2.0 (Nov. 1997) DRAM MODULE KMM466F203CS2-L KMM466F213CS2-L KMM466F203CS2-L & KMM466F213CS2-L EDO Mode 2M x 64 DRAM SODIMM using 2MX8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION The Samsung KMM466F20(1)3CS2-L is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM466F20(1)3CS2-L consists of eight CMOS 2Mx8bits DRAMs in TSOP 400mil packages and a 1K or 2K EEPROM in 8-pin TSSOP package mounted on a 144-pin glass-epoxy www.DataSheet4U.com substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM466F20(1)3CS2-L is a Small Out-line Dual in-line Memory Module and is intended for mounting into 144 pin edge connector sockets. FEATURES Part Identification - KMM466F203CS2-L(4096 cycles/128ms, TSOP, L-ver) - KMM466F213CS2-L(2048 cycles/128ms, TSOP, L-ver) Extended Data Out Mode Operation New JEDEC standard proposal with EEPROM Serial Presense Detect with EEPROM CAS-before-RAS Refresh capability Self -refresh capability RAS-only and Hidden refresh capability LVTTL compatible inputs and outputs Single +3.3V ±0.3V power supply PCB : Height(1000mil), Double sided comp...