LH5324000

LH5324000 FEATURES 3,145,728 × 8 bit organization Access time: 150 ns (MAX.) Supply current: – Operating: 65 mA (MAX.) – Standby: 100 µA (MAX.) TTL compatible I/O Three-state output Single +5 V Power supply Static operation When the address input at both A19 and A20 is high level, outputs become high impedance irrespective of CE or OE. Package: 42-pin, 600-mil DIP Others: – Non programmable – Not designed or rated as radiation hardened – CMOS process (P type silicon substrate) DESCRIPTION The LH5324000 is a 24M-bit CMOS mask-programmable ROM organized as 3,145,728 × 8 bits. It is fabricated using silicon-gate CMOS process technology. 42-PIN DIP CMOS 24M (3M × 8) MROM PIN CONNECTIONS TOP VIEW A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE D0 NC D1 NC D2 NC D3 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 A20 GND A-1 D7 NC D6 NC D5 NC D4 VCC 532400-1 Figure 1. Pin Connections 1 LH5324000 CMOS 24M (3M x 8) MROM A20 32 A19 42 A18 1 A17 2 A16 33 A15 34 A14 35 MEMORY MATRIX (3,145,728 x 8) ADDRESS BUFFER DATA SELECTOR/OUTPUT BUFFER A13 36 A12 37 A11 38 A10 39 A9 40 A8 41 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 ADDRESS DECODER 29 D7 27 D6 25 D5 23 D4 20 D3 18 D2 16 D1 14 D0 COLUMN SELECTOR CE 11 CE BUFFER TIMING GENERATOR SENSE AMPLIFIER OE 13 OE BUFFER ADDRESS BUFFER 30 A-1 22 VCC 12 31 GND 532400-2 Figure 2. LH5324000 Block Diagram...