KMM466F404BS2-L

DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM466F404BS2-L consists of four CMOS 4Mx16bits DRAMs in TSOP 400mil packages and a 2K EEPROM in 8www.DataSheet4U.com pin TSSOP package mounted on a 144-pin glass-epoxy substrate. A 0.1uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM466F404BS2-L is a Small Out-line Dual in-line Memory Module and is intended for mounting into 144 pin edge connector sockets. FEATURES Part Identification - KMM466F404BS2-L(4096 cycles/128ms, TSOP, L-ver) Extended Data Out Mode Operation New JEDEC standard proposal with EEPROM Serial Presense Detect with EEPROM CAS-before-RAS Refresh capability Self -refresh capability RAS-only and Hidden refresh capability LVTTL compatible inputs and outputs Single +3.3V± 0.3V power supply PCB : Height(1000mil), double sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 84ns 104ns tHPC 20ns 25ns PIN CONFIGURATIONS Pin Front Pin 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 VSS CAS0 CAS1 VCC A0 A1 A2 VSS DQ8 DQ9 DQ10 DQ11 VCC DQ12 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Back VSS DQ32 DQ33 DQ34 DQ35 VCC DQ36 DQ37 DQ38 DQ39 VSS CAS4 CAS5 VCC A3 A4 A...