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KMM466S1723T3

Samsung Semiconductor

144pin SDRAM SODIMM

KMM466S1723T3 Revision History Revision 2 (August 1998) 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 ...


Samsung Semiconductor

KMM466S1723T3

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Description
KMM466S1723T3 Revision History Revision 2 (August 1998) 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. www.DataSheet4U.com Preliminary 144pin SDRAM SODIMM REV. 2 August 1998 KMM466S1723T3 KMM466S1723T3 SDRAM SODIMM Preliminary 144pin SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM466S1723T3 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM466S1723T3 consists of eight CMOS 16M x 8 bit with www.DataSheet4U.com4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The KMM466S1723T3 is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE Performance range Part No. KMM466S1723T3-F0 Max Freq. (Speed) 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key p...




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