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KMM466S823CT2

Samsung Semiconductor

144pin SDRAM SODIMM

KMM466S823CT2 Revision History Revision 2 (August 1998) 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 ...


Samsung Semiconductor

KMM466S823CT2

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Description
KMM466S823CT2 Revision History Revision 2 (August 1998) 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. www.DataSheet4U.com Preliminary 144pin SDRAM SODIMM REV. 2 August 1998 KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM Preliminary 144pin SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM466S823CT2 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM466S823CT2 consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a www.DataSheet4U.com2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The KMM466S823CT2 is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE Performance range Part No. Max Freq. (Speed) KMM466S823CT2-F0 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key pro...




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