PC66 SODIMM
KMM466S823DT3
Revision History
Revision 0.0 (July 5, 1999)
PC66 SODIMM
• Changed tRDL from 1CLK to 2CLK in OPERATING A...
Description
KMM466S823DT3
Revision History
Revision 0.0 (July 5, 1999)
PC66 SODIMM
Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. Skip ICC4 value of CL=2 in DC characteristics in datasheet. Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE. Symbol Change Notice
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IIL IIL IOL
Before Input leakage current (inputs) Input leakage current (I/O pins) Output open @ DC characteristic table ILI Io
After Input leakage current Output open @ DC characteristic table
Test Condition in DC CHARACTERISTIC Change Notice
Symbol ICC2P , ICC3P ICC2N , ICC3N ICC4 Before CKE ≤ VIL(max), tCC = 15ns CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns 2 Banks activated After CKE ≤ VIL(max), tCC = 10ns CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 4 Banks activated
Added Notes @OPERATING AC PARAMETER
Notes : 5. For -0, tRDL=1CLK and tDAL=1CLK+20ns is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.
Revision 0.1 (July 29, 1999)
Changed misprinted "Detail Y" @ PACKAGE DIMENSIONS.
REV. 0.1 July 1999
KMM466S823DT3
KMM466S823DT3 SDRAM SODIMM
PC66 SODIMM
8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung KMM466S823DT3 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung K...
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