(HUR10100 / HUR10120) High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR10100, HUR10120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-220AC A C(...
Description
HUR10100, HUR10120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L M N Q
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A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200
HUR10100 HUR10120
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055
Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical
Test Conditions TC=115oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=8A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive
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Maximum Ratings 35 10 40 6.9 0.8 -55...+175 175 -55...+150 60 0.4...0.6 2
Unit A A mJ A
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C
W Nm g
HUR10100, HUR10120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=10A; TVJ=150oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 60 0.25 1.96 2.94 2.5 0.5
Unit uA mA V K/W ns A
IR VF
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RthJC RthCH trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=100V; IF=12A; -diF/dt=100A/us; TVJ=100 C
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40 4
FEATURES
* International standard package * Planar passivated chips * Very short recovery time * Extremely low switching loss...
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