(HUR29100 / HUR29120) High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR29100, HUR29120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-220AC A C(...
Description
HUR29100, HUR29120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L M N Q
www.DataSheet4U.com
A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200
HUR29100 HUR29120
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055
Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical
Test Conditions TC=115oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=11.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive
o
Maximum Ratings 35 30 200 14 1.2 -55...+175 175 -55...+150 165 0.4...0.6 2
Unit A A mJ A
o
C
W Nm g
HUR29100, HUR29120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 250 1 1.81 2.75 0.9 0.5
Unit uA mA V K/W ns A
IR VF
www.DataSheet4U.com
RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C
o
40 5.5
FEATURES
* International standard package * Planar passivated chips * Very short recovery time * Extremely low switching...
Similar Datasheet