DatasheetsPDF.com

HUR2X60-60 Dataheets PDF



Part Number HUR2X60-60
Manufacturers Sirectifier Semiconductors
Logo Sirectifier Semiconductors
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Datasheet HUR2X60-60 DatasheetHUR2X60-60 Datasheet (PDF)

HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.

  HUR2X60-60   HUR2X60-60


Document
HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 www.DataSheet4U.com HUR2x60-60 VRSM V 600 VRRM V 600 R S T U V W Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA Test Conditions TC=65oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=2A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 100 60 600 0.3 0.2 -40...+150 150 -40...+150 140 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 Unit A A mJ A o C W V~ Nm/lb.in. g mounting torque (M4) terminal connection torque (M4) typical HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=125oC TVJ=25oC Test Conditions Characteristic Values typ. max. 0.65 2.5 1.48 2.01 0.85 0.1 Unit IR VF www.DataSheet4U.com mA V K/W ns RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C o 35 8.3 A FEATURES * International standard package miniBLOC * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 160 A 140 IF 120 4000 nC 3000 TVJ= 100°C VR = 300V 80 A 60 TVJ= 100°C VR = 300V TVJ= 25°C 100 Qr 2000 TVJ=100°C 80 IF=120A IF= 60A IF= 30A IRM 40 IF=120A IF= 60A IF= 30A TVJ=150°C 60 www.DataSheet4U.com 40 20 0 0 1 VF 2 V 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 800 1000 -diF/dt 1000 20 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 140 ns 130 Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR 15 1.6 us tfr 2.0 TVJ= 100°C VR = 300V 1.5 Kf 1.0 trr 120 110 tfr IF=120A IF= 60A IF= 30A 10 VFR 1.2 0.8 IRM 100 0.5 5 0.4 Qr 90 80 0 0 200 400 600 -diF/dt 800 1000 A/us 0 0.0 0 40 80 120 °C 160 TVJ TVJ= 100°C IF = 60A 200 400 0.0 600 A/us 800 1000 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.3073 0.3533 0.0887 0.1008 ti (s) 0.0055 0.0092 0.0007 0.0399 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case .


HUR2X60-40 HUR2X60-60 HUR30100


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)