Document
HUR2x60-60
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions SOT-227(ISOTOP)
Dim. A B C D E F G H J K L M N O P Q
Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830
Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08
www.DataSheet4U.com
HUR2x60-60
VRSM V 600
VRRM V 600
R S T U V W
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA
Test Conditions TC=65oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=2A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive
o
Maximum Ratings 100 60 600 0.3 0.2 -40...+150 150 -40...+150 140 2500 1.1-1.5/9-13 1.1-1.5/9-13 30
Unit A A mJ A
o
C
W V~ Nm/lb.in. g
mounting torque (M4) terminal connection torque (M4) typical
HUR2x60-60
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=125oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 0.65 2.5 1.48 2.01 0.85 0.1
Unit
IR VF
www.DataSheet4U.com
mA V K/W ns
RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C
o
35 8.3
A
FEATURES
* International standard package miniBLOC * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
HUR2x60-60
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
160 A 140 IF 120 4000 nC 3000
TVJ= 100°C VR = 300V
80 A 60
TVJ= 100°C VR = 300V
TVJ= 25°C
100
Qr 2000
TVJ=100°C
80
IF=120A IF= 60A IF= 30A
IRM 40
IF=120A IF= 60A IF= 30A
TVJ=150°C
60
www.DataSheet4U.com
40 20 0 0 1 VF 2 V 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 800 1000 -diF/dt 1000 20
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
140 ns 130
Fig. 3 Peak reverse current IRM versus -diF/dt
20 V VFR 15 1.6 us tfr
2.0
TVJ= 100°C VR = 300V
1.5 Kf 1.0
trr 120 110
tfr IF=120A IF= 60A IF= 30A
10
VFR
1.2
0.8
IRM
100 0.5 5 0.4
Qr
90 80 0 0 200 400 600 -diF/dt 800 1000 A/us 0
0.0 0 40 80 120 °C 160 TVJ
TVJ= 100°C IF = 60A
200 400
0.0 600 A/us 800 1000 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.3073 0.3533 0.0887 0.1008 ti (s) 0.0055 0.0092 0.0007 0.0399
0.001
0.0001 0.00001
0.0001
0.001
0.01
0.1 t
s
1
Fig. 7 Transient thermal resistance junction to case
.