HUR30100PT

HUR30100PT, HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 www.DataSheet4U.com A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200 J K L M N HUR30100PT HUR30120PT Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=125oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=9A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive o Maximum Ratings 35 2 x 15 90 8.7 0.9 -55...+175 175 -55...+150 95 0.4...0.6 2 Unit A A mJ A o C W Nm g HUR30100PT, HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=15A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 100 0.5 1.79 2.75 1.6 0.5 Unit uA mA V K/W ns A IR VF www.DataSheet4U.com RthJC RthCH trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C o 40 4.5 FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * ...