High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR3040
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-247AC A C(TAB) C
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Description
HUR3040
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-247AC A C(TAB) C
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Dim. A B C D E F G H J K L M N
C
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
A
A=Anode, C=Cathode, TAB=Cathode
HUR3040
VRSM V 400
VRRM V 400
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical
Test Conditions TC=140oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=tbdA; L=tbduH VA=1.5.VR typ.; f=10kHz; repetitive
o
Maximum Ratings 70 30 tbd tbd tbd -55...+175 175 -55...+150 165 0.8...1.2 6
Unit A A mJ A
o
C
W Nm g
HUR3040
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 250 1 1.11 1.46 0.9 0.25
Unit uA mA V K/W ns
IR VF
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RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C
o
30 5.5 6.8
A
FEATURES
* International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* A...
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