BU508F TRANSISTORS Datasheet

BU508F Datasheet PDF, Equivalent


Part Number

BU508F

Description

NPN POWER TRANSISTORS

Manufacture

TRANSYS Electronics

Total Page 2 Pages
Datasheet
Download BU508F Datasheet


BU508F
Transys
Electronics
LIMITED
NPN POWER TRANSISTORS
BU508F, BU508AF,
BU508DF
TO- 3P Fully Isolated
Plastic Package
B
www.DataSCheet4U.com
E
Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Total Power Dissipation upto Ta=25º C
Tc=25º C
Storage Temperature Range
Max Operating Junction Temperature
SYMBOL
VCES
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
VALUE
1500
700
5
8
15
34
60
- 65 to +150
150
UNIT
V
V
V
A
W
ºC
ºC
THERMAL RESISTANCE
Thermal Resistance Junction - Case
Rth (j-c)
2.08
ºC/W
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
.
DESCRIPTION
SYMBOL TEST CONDITIONS
Collector Cut off Current
Collector Emitter Sustaining Voltage
ICES
VCEO (sus)*
VCE=VCES, VBE=0
IB =0, IC=100mA
Emitter Base Voltage
VEBO
IE=10mA, IC =0
BU508F, AF
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
BU508DF
DC Current Gain
hFE IC=4.5A, VCE=5V
Diode forward Voltage
VF IF=4.0A
BU508DF
Collector Emitter Saturation Voltage
VCE(sat) *
IC=4.5A, IB=2.0A
BU508AF, DF
IC=4.5A, IB=2.0A
BU508F
Base Emitter Saturation Voltage
VBE(sat) *
IC=4.5A, IB=2.0A
MIN
700
5.0
2.25
SWITCHING TIME
Storage Time
Fall Time
ts IC=4.5A,hFE=2.5,VCC=140V
tf LC=0.9mH, LB=3µH
* Pulse test: Pulse Duration <300µs , Duty cycle < 1.5%.
TYP
7.0
0.5
MAX
1.0
300
2.0
1.0
5.0
1.5
UNIT
mA
V
V
mA
V
V
V
V
µs
µs

BU508F
A
www.DataSheet4U.com
E
S
F
1
2
3
K
PP
BU508F, BU508AF,
BU508DF
TO- 3P Fully Isolated
Plastic Package
TO-3P (TO-218) Plastic Package
DB
C
G
H
L
M
N
DIM MIN MAX
A 15.80 16.40
B 5.20 5.70
C 3.80 4.20
D Ø 3.30 Ø 3.60
E 14.50 15.10
F 33.25 36.75
G 20.75 21.25
H 11.50 12.25
K 1.00 1.30
L 18.75 21.65
M 0.40 0.60
N 3.15 3.45
P 5.21 5.72
S 18.75 19.25
All diminsions in mm.
1
2
3
Pin Configuration
1. Base
2. Collector
3. Emitter
Packing Detail
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
TO-3P
100 pcs/polybag 628 gm/100 pcs
INNER CARTON BOX
Size
Qty
3" x 7.5" x 7.5"
0.3K
OUTER CARTON BOX
Size
Qty Gr Wt
17" x 15" x 13.5"
4.8K 42 kgs


Features Transys Electronics L I M I T E D NPN P OWER TRANSISTORS BU508F, BU508AF, BU50 8DF TO- 3P Fully Isolated Plastic Packa ge www.DataSheet4U.com C B E Fast S witching, High Voltage Devices for use in Horizontal Deflection Circuits of Co lour TV ABSOLUTE MAXIMUM RATINGS DESCRI PTION Collector -Emitter Voltage Collec tor -Emitter Voltage Emitter Base Volta ge Collector Current Collector Peak Cur rent Total Power Dissipation upto Ta=25 º C Tc=25º C Storage Temperature Rang e Max Operating Junction Temperature TH ERMAL RESISTANCE Thermal Resistance Jun ction - Case SYMBOL VCES VCEO VEBO IC I CM Ptot Tstg Tj VALUE 1500 700 5 8 15 3 4 60 - 65 to +150 150 UNIT V V V A W º C ºC Rth (j-c) 2.08 ºC/W ELECTRIC AL CHARACTERISTICS (TC=25ºC unless spe cified otherwise) . TEST CONDITIONS DES CRIPTION SYMBOL ICES VCE=VCES, VBE=0 Co llector Cut off Current VCEO (sus)* IB =0, IC=100mA Collector Emitter Sustaini ng Voltage VEBO IE=10mA, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU5.
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