High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR6030PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A C(TAB) A C A
C
A
Dimensions ...
Description
HUR6030PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A C(TAB) A C A
C
A
Dimensions TO-247AD
Dim. A B C D E F G H J K
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
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A=Anode, C=Cathode, TAB=Cathode
HUR6030PT
VRSM V 300
VRRM V 300
L M N
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical
Test Conditions TC=145oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=3A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive
o
Maximum Ratings 70 2 x 30 300 1.2 0.3 -55...+175 175 -55...+150 165 0.8...1.2 6
Unit A A mJ A
o
C
W Nm g
HUR6030PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 250 1 0.91 1.25 0.9 0.25
Unit uA mA V K/W ns
IR VF
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RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C
o
30 7
A
FEATURES
* International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICA...
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