HUR6060PT

HUR6060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H J K Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 www.DataSheet4U.com A=Anode, C=Cathode, TAB=Cathode HUR6060PT VRSM V 600 VRRM V 600 L M N Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=135oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=1.3A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 2 x 30 250 0.2 0.1 -55...+175 175 -55...+150 165 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR6060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 250 1 1.25 1.60 0.9 0.25 Unit uA mA V K/W ns A IR VF www.DataSheet4U.com RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C o 35 6 FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLIC...