High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR820
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-220AC A C(TAB) A C C
...
Description
HUR820
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L M N Q
www.DataSheet4U.com
A=Anode, C=Cathode, TAB=Cathode
HUR820
VRSM V 200
VRRM V 200
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055
Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical
Test Conditions TC=150oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=2A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive
o
Maximum Ratings 35 8 80 0.5 0.2 -55...+175 175 -55...+150 60 0.4...0.6 2
Unit A A mJ A
o
C
W Nm g
HUR820
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=8A; TVJ=150oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 50 0.2 0.94 1.30 2.5 0.5
Unit uA mA V K/W ns
IR VF
www.DataSheet4U.com
RthJC RthCH trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=100V; IF=10A; -diF/dt=100A/us; TVJ=100 C
o
25 4.1
A
FEATURES
* International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
...
Similar Datasheet