HUR820S

HUR820S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC www.DataSheet4U.com A=Anode, Dimensions TO-263(D2PAK) C Dim. A A1 b b2 c c2 D D1 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 NC= No connection, TAB=Cathode E E1 e L L1 L2 L3 L4 R 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 HUR820S VRSM V 200 VRRM V 200 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=150oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=2A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 35 8 80 0.5 0.2 -55...+175 175 -55...+150 60 0.4...0.6 2 Unit A A mJ A o C W Nm g HUR820S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=8A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 50 0.2 0.94 1.30 2.5 0.5 Unit uA mA V K/W ns IR VF www.DataSheet4U.com RthJC RthCH trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=100V; IF=10A; -diF/dt=100A/us; TVJ=100 C o 25 4.1 A FEATURES * International standard package *...