SKM600GAL126D

SKM600GAL126D SEMITRANS® 3 Trench IGBT Modules SKM600GAL126D Features Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x IC UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders Remarks IDC ≤ 500A for TTerminal = 100 °C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Freewheeling diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 400 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 16 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 125 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 20 V Tj = 25 °C Values 1200 660 461 400 800 -20 ... 20 10 -40 ... 150 490 337 400 800 3312 -40 ... 150 490 337 400 800 3312 -40 ... 150 500 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A A A A A °C A °C V min. typ. max. Unit 1.70 2.12 V...