2SD555 Transistors Datasheet

2SD555 Datasheet PDF, Equivalent


Part Number

2SD555

Description

Silicon NPN Power Transistors

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SD555 Datasheet


2SD555
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD555
DESCRIPTION
·With TO-3 package
·High power dissipation
·Complement to type 2SB600
APPLICATIONS
www.DataSheet4·FUo.cromhigh speed ,high current ,high power
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
250
200
5
10
200
150
-55~200
UNIT
V
V
V
A
W
VALUE
1.46
UNIT
/W

2SD555
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD555
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO
www.DataSheet4U.com
VCEsat-1
Emitter-base breakdown voltage
Collector-emitter saturation voltage
IE=1mA ;IC=0
IC=5A; IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=2A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A
ICBO Collector cut-off current
VCB=250V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=2A ; VCE=5V
COB Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
fT Transition frequency
IC=1A ; VCE=10V
MIN TYP. MAX UNIT
200 V
5V
1.5 V
5.0 V
2.0 V
0.1 mA
0.1 mA
40 200
300 pF
15 MHz
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD555 DESCRIPTION ·With TO-3 package ·High power dissipation ·Complement t o type 2SB600 APPLICATIONS speed ,high current ,high power applications PINNIN G(see Fig.2) PIN 1 2 3 Base Emitter Col lector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION www.DataSheet4U .com ·For high Absolute maximum ratin gs(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector pow er dissipation Junction temperature Sto rage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 200 5 10 200 150 -55~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rt h j-C PARAMETER Thermal resistance junc tion to case VALUE 1.46 UNIT /W Savant IC Semiconductor Product Specification Silicon NPN Power Transistors CHARACT ERISTICS Tj=25 unless otherwise specifi ed PARAMETER Collector-emitter breakdown voltage Emitter-base break.
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