2SC2615 Transistors Datasheet

2SC2615 Datasheet PDF, Equivalent


Part Number

2SC2615
Description

Silicon NPN Power Transistors
Manufacture

SavantIC
Total Page 3 Pages
Datasheet
Download 2SC2615 Datasheet


2SC2615
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2615
DESCRIPTION
·With TO-247 package
·High voltage,high speed
APPLICATIONS
·For high voltage,high speed and high
www.DataSheet4Up.coowmer switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
7
8
80
150
-55~150
UNIT
V
V
V
A
W

2SC2615
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2615
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
www.DataSheet4UV.(cBoRm)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.8A
ICBO Collector cut-off current
VCB=400V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
MIN TYP. MAX UNIT
400 V
7V
1.0 V
1.5 V
0.1 mA
0.1 mA
15
7
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SC2615 DESCRIPTION ·With TO-247 packa ge ·High voltage,high speed APPLICATIO NS ·For high voltage,high speed and hi gh power switching applications www.Dat aSheet4U.com PINNING PIN 1 2 3 Base Col lector;connected to mounting base Emitt er Fig.1 simplified outline (TO-247) an d symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO I C PC Tj Tstg PARAMETER Collector-base v oltage Collector-emitter voltage Emitte r-base voltage Collector current (DC) C ollector power dissipation Junction tem perature Storage temperature TC=25 Open emitter Open base Open collector CONDI TIONS VALUE 500 400 7 8 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Pow er Transistors 2SC2615 CHARACTERISTIC S Tj=25 unless otherwise specified PARA METER Collector-emitter sustaining volt age Emitter-base breakdown voltage Coll ector-emitter saturation voltage Base-emitter saturation voltage C.
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