2SK3663 TRANSISTOR Datasheet

2SK3663 Datasheet PDF, Equivalent


Part Number

2SK3663

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Total Page 6 Pages
Datasheet
Download 2SK3663 Datasheet


2SK3663
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3663
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3663 is a switching device which can be driven directly
www.DataSheet4Ub.ycoam2.5 V power source.
The 2SK3663 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
RDS(on)1 = 0.57 MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)2 = 0.60 MAX. (VGS = 4.0 V, ID = 0.30 A)
RDS(on)3 = 0.88 MAX. (VGS = 2.5 V, ID = 0.15 A)
ORDERING INFORMATION
PART NUMBER
2SK3663
Remark Marking : G26
PACKAGE
SC-70 (SSP)
PACKAGE DRAWING (Unit: mm)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID (DC)
ID (pulse)
PT
Channel Temperature
Tch
Storage Temperature
Tstg
20
±12
±0.5
±2.0
0.2
150
55 to +150
V
V
A
A
W
°C
°C
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on FR-4 board of 2500 mm2 x 1.1 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16529EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2003

2SK3663
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 20 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off VoltageNote
Forward Transfer AdmittanceNote
Drain to Source On-state ResistanceNote
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = ±12 V, VDS = 0 V
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 0.30 A
VGS = 4.5 V, ID = 0.30 A
RDS(on)2 VGS = 4.0 V, ID = 0.30 A
RDS(on)3 VGS = 2.5 V, ID = 0.15 A
Input Capacitance
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Output Capacitance
Ciss
Coss
VDS = 10 V
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 0.30 A
Rise Time
tr VGS = 4.0 V
Turn-off Delay Time
td off)
RG = 10
Fall Time
tf
Body Diode Forward Voltage
VF(S-D) IF = 0.5 A, VGS = 0 V
Note Pulsed : PW350 µs, Duty Cycle2%
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton toff
2SK3663
MIN. TYP. MAX. UNIT
1.0 µA
±10 µA
0.5 1.0 1.5 V
0.25 0.75
S
0.38 0.57
0.41 0.60
0.60 0.88
28 pF
11 pF
7 pF
20 ns
51 ns
94 ns
87 ns
0.87 V
2 Data Sheet D16529EJ1V0DS


Features DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3663 N-CHANNEL MOS FIELD EFFECT TRA NSISTOR FOR SWITCHING DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power so urce. www.DataSheet4U.com The 2SK3663 f eatures a low on-state resistance and e xcellent switching characteristics, and is suitable for applications such as p ower switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) FEATUR ES • 2.5 V drive available • Low on -state resistance RDS(on)1 = 0.57 Ω M AX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.3 0 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2. 5 V, ID = 0.15 A) ORDERING INFORMATION PART NUMBER 2SK3663 PACKAGE SC-70 (SSP ) Remark Marking : G26 ABSOLUTE MAXIM UM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Vol tage (VDS = 0 V) Drain Current (DC) Dra in Current (pulse) Note1 Note2 EQUIVAL ENT CIRCUIT VDSS VGSS ID (DC) 20 ±12 0.5 ±2.0 0.2 150 −55 to +150 V V A A W °C °C Gate Body Diode Drain ID (pul.
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