2SK3664 TRANSISTOR Datasheet

2SK3664 Datasheet PDF, Equivalent


Part Number

2SK3664

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Total Page 6 Pages
Datasheet
Download 2SK3664 Datasheet


2SK3664
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3664
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3664 is a switching device, which can be driven directly
www.DataSheet4U.cboTymhae2.d5eVvicpeowfeerastuoruerscea. low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
RDS(on)1 = 0.57 MAX. (VGS = 4.5 V, ID = 0.3 A)
RDS(on)2 = 0.60 MAX. (VGS = 4.0 V, ID = 0.3 A)
RDS(on)3 = 0.88 MAX. (VGS = 2.5 V, ID = 0.15 A)
ORDERING INFORMATION
PART NUMBER
2SK3664
Marking: G1
PACKAGE
SC-75 (USM)
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
3
2
0.2
+0.1
–0
1
0.5 0.5
1.0
1.6 ± 0.1
0 to 0.1
0.6
0.75 ± 0.05
1: Source
2: Gate
3: Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID(DC)
ID(pulse)
PT
Channel Temperature
Tch
Storage Temperature
Tstg
20
±12
±0.5
±2.0
0.2
150
55 to +150
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on ceramic substrate of 300 mm2 x 0.64 mm
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
caution for electrostatic discharge.
VESD = ±200 V TYP. (C = 200 pF, R = 0 , Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16599EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2003

2SK3664
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 20 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±12 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 0.3 A
VGS = 4.5 V, ID = 0.3 A
RDS(on)2 VGS = 4.0 V, ID = 0.3 A
RDS(on)3 VGS = 2.5 V, ID = 0.15 A
Input Capacitance
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Output Capacitance
Ciss
Coss
VDS = 10 V
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 0.30 A
Rise Time
tr VGS = 4.0 V
Turn-off Delay Time
td(off)
RG = 10
Fall Time
Body Diode Forward Voltage Note
tf
VF(S-D)
IF = 0.5 A, VGS = 0 V
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton toff
2SK3664
MIN. TYP. MAX. UNIT
1.0 µA
±10 µA
0.5 1.0 1.5
V
0.25 0.75
S
0.38 0.57
0.41 0.60
0.60 0.88
28 pF
11 pF
7.0 pF
20 ns
51 ns
94 ns
87 ns
0.87 V
2 Data Sheet D16599EJ2V0DS


Features DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRA NSISTOR FOR SWITCHING DESCRIPTION The 2SK3664 is a switching device, which ca n be driven directly by a 2.5 V power s ource. www.DataSheet4U.com The device f eatures a low on-state resistance and e xcellent switching characteristics, and is suitable for applications such as p ower switch of portable machine and so on. 1.6 ± 0.1 0.8 ± 0.1 PACKAGE DRAW ING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 3 0 to 0.1 2 0.2 0.5 +0.1 –0 FEATURES • 2.5 V drive available Low on-state resistance RDS(on)1 = 0. 57 Ω MAX. (VGS = 4.5 V, ID = 0.3 A) R DS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, I D = 0.3 A) RDS(on)3 = 0.88 Ω MAX. (VG S = 2.5 V, ID = 0.15 A) 1 0.5 0.6 0. 75 ± 0.05 ORDERING INFORMATION PART N UMBER 2SK3664 PACKAGE SC-75 (USM) 1.0 1.6 ± 0.1 1: Source 2: Gate 3: Drain Marking: G1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (V GS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse.
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