2SK3666 FET Datasheet

2SK3666 Datasheet PDF, Equivalent


Part Number

2SK3666

Description

N-Channel Junction Silicon FET

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download 2SK3666 Datasheet


2SK3666
Ordering number : EN8158A
2SK3666
2SK3666
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
www.DataSheetA4Up.cpomlicatins
Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
Features
Small IGSS.
Small Ciss
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-State Resistance
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
RDS(on)
IG=--10µA, VDS=0V
VGS=--20V, VDS=0V
VDS=10V, ID=1µA
VDS=10V, VGS=0V
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10mV, VGS=0V
Ratings
30
--30
10
10
200
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
min
--30
Ratings
typ
--0.18
0.6*
3.0
--0.95
6.5
4
1.1
200
max
--1.0
--2.2
6.0*
Unit
V
nA
V
mA
mS
pF
pF
* : The 2SK3666 is classified by IDSS as follows : (unit : mA).
Rank
2
3
4
IDSS
0.6 to 1.5
1.2 to 3.0
2.5 to 6.0
Marking : JK
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2805GM IM MS TB-00001984 / 31505GB TS IM TA-100303 No.8158-1/4

2SK3666
Package Dimensions
unit : mm
7013A-011
2.9 0.1
3
1
0.95
2
0.4
www.DataSheet4U.com
1 : Source
2 : Drain
3 : Gate
SANYO : CP
2SK3666
ID -- VDS
5.0
4.0
3.0 VGS=0V
2.0 --0.1V
--0.2V
1.0 --0.3V
--0.4V
0
0 1.0 2.0 3.0 4.0 5.0
Drain-to-Source Voltage, VDS -- V ITR00633
ID -- VGS
8
VDS=10V
6
--1.50
4
I DSS=5.0mA3.0mA
2
--1.25
--1.00
--0.75
--0.50
1.0mA
--0.25
0
0
Gate-to-Source Voltage, VGS -- V ITR00635
ID -- VDS
5
4
VGS=0V
3
--0.1V
2
--0.2V
1 --0.3V
--0.4V
0
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V ITR00634
ID -- VGS
5
VDS=10V
4
3
2
75°C 1
25°C
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
Gate-to-Source Voltage, VGS -- V ITR00636
No.8158-2/4


Features Ordering number : EN8158A 2SK3666 2SK3 666 Applicatins www.DataSheet4U.com • N-Channel Junction Silicon FET Low-F requency General-Purpose Amplifier, Imp edance Converter Applications Low-freq uency general-purpose amplifier, impeda nce conversion, infrared sensor applica tions. Features • • Small IGSS. S mall Ciss Specifications Absolute Maxi mum Ratings at Ta=25°C Parameter Drain -to-Source Voltage Gate-to-Drain Voltag e Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 -- 30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteri stics at Ta=25°C Parameter Gate-to-Dra in Breakdown Voltage Gate-to-Source Lea kage Current Cutoff Voltage Drain Curre nt Forward Transfer Admittance Input Ca pacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resista nce Symbol V(BR)GDS IGSS VGS(off) IDSS yfs Ciss Crss RDS(on) Conditions IG=-10µA, VDS=0V VGS=--20V, VDS=0V VDS.
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