2SK3666

Ordering number : EN8158A 2SK3666 2SK3666 Applicatins www.DataSheet4U.com N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. Features Small IGSS. Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resistance Symbol V(BR)GDS IGSS VGS(off) IDSS yfs Ciss Crss RDS(on) Conditions IG=-10µA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1µA VDS=10V, VGS=0V VDS=10V, VGS=0V, f=1kHz VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDS=10mV, VGS=0V Ratings min --30 --1.0 --0.18 0.6* 3.0 6.5 4 1.1 200 --0.95 --2.2 6.0* typ max Unit V nA V mA mS pF pF Ω * : The 2SK3666 is classified by IDSS as follows : (unit : mA). Rank 2 3 4 IDSS 0.6 to 1.5 1.2 to 3.0 2.5 to 6.0 Marking : JK Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels o...