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2SK3668 MOSFET Datasheet |
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| Part Number | 2SK3668 |
| Description | SWITCHING N-CHANNEL POWER MOSFET |
| Manufacture | NEC |
| Total Page | 8 Pages |
| Datasheet |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3668
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3668 is N-channel DMOS FET device that
features a low on-state resistance, low charge and
www.DataSheet4U.ceoxmcellent switching characteristics, designed for high
voltage applications such as high intensity discharge
lamp drive.
FEATURES
• Low gate charge
QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 5.0 A)
• Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
5 Single Avalanche Energy Note2
Tstg
IAS
EAS
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3668-ZK
TO-263 (MP-25ZK)
(TO-263)
400
±30
±10
±34
1.5
100
150
–55 to +150
10
8
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
5 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistane
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16547EJ2V0DS00 (2nd edition)
Date Published April 2003 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
2002
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2SK3668
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 400 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
5 Forward Transfer Admittance Note
5 Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 5.0 A
VGS = 10 V, ID = 5.0 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
www.DataSheet4U.com
Turn-on Delay Time
Crss f = 1.0 MHz
td(on)
VDD = 150 V, ID = 5.0 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 320 V
Gate to Source Charge
QGS VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 10 A
IF = 10 A, VGS = 0 V
Reverse Recovery Time
trr IF = 10 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
Note Pulsed: PW ≤ 800 µs, Duty Cycle ≤ 2%
MIN.
2.5
3.0
TYP.
5.6
0.40
1320
230
13
18
8
44
4
26
7
11
0.90
350
2.7
MAX.
100
±100
3.5
0.55
UNIT
µA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
50 Ω
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL VGS
VGS
Wave Form
10%
0
VGS 90%
VDD
ID 90%
ID 0 10%
Wave Form
ID
90%
10%
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D16547EJ2V0DS
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| Features | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3668 is N-chann el DMOS FET device that features a low on-state resistance, low charge and www .DataSheet4U.com excellent switching ch aracteristics, designed for high voltag e applications such as high intensity d ischarge lamp drive. ORDERING INFORMAT ION PART NUMBER 2SK3668-ZK PACKAGE TO-2 63 (MP-25ZK) (TO-263) FEATURES • Lo w gate charge QG = 26 nC TYP. (VDD = 32 0 V, VGS = 10 V, ID = 10 A) • Gate vo ltage rating: ±30 V • Low on-state r esistance RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 5.0 A) • Surface mount p ackage available ABSOLUTE MAXIMUM RATI NGS (TA = 25°C) Drain to Source Voltag e (VGS = 0 V) Gate to Source Voltage (V DS = 0 V) Drain Current (DC) (TC = 25° C) Drain Current (pulse) Note1 VDSS VG SS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 4 00 ±30 ±10 ±34 1.5 100 150 –55 to +150 10 8 V V A A W W °C °C A mJ To tal Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Tempe. |
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