2SK3668

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and www.DataSheet4U.com excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive. ORDERING INFORMATION PART NUMBER 2SK3668-ZK PACKAGE TO-263 (MP-25ZK) (TO-263) FEATURES Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) Gate voltage rating: ±30 V Low on-state resistance RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 5.0 A) Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 400 ±30 ±10 ±34 1.5 100 150 –55 to +150 10 8 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current 5 Single Avalanche Energy Note2 Note2 IAS EAS 5 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistane Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not a...