2SK3567 MOSFET Datasheet

2SK3567 Datasheet PDF, Equivalent


Part Number

2SK3567

Description

N-Channel MOSFET

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
Datasheet
Download 2SK3567 Datasheet


2SK3567
2SK3567
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3567
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.)
High forward transfer admittance: |Yfs| = 2.5S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
3.5
14
35
201
3.5
3.5
150
-55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.57 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 28.8 mH, IAR = 3.5 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SK3567
Electrical Characteristics (Ta = 25°C)
2SK3567
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
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Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯ ⎯ ±10
V (BR) GSS IG = ±10 μA, VDS = 0 V
±30
IDSS
VDS = 600 V, VGS = 0 V
⎯ ⎯ 100
V (BR) DSS ID = 10 mA, VGS = 0 V
600
Vth VDS = 10 V, ID = 1 mA
2.0 4.0
RDS (ON) VGS = 10 V, ID = 1.8 A
1.7 2.2
Yfs
VDS = 10 V, ID = 1.8 A
0.7 2.5
Ciss
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
550
6
Coss
60
tr
10 V
VGS
ID = 1.8 A VOUT
12
0V
ton
50 Ω
RL =
45
111 Ω
tf 13
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 μs
80
μA
V
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 3.5 A
Qgd
16
10 nC
6
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 3.5 A, VGS = 0 V
IDR = 3.5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 3.5 A
⎯ ⎯ 14 A
⎯ ⎯ −1.7 V
1400
ns
9.0 ⎯ μC
Marking
K3567
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-08


Features 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 Switching Regulator Application s • • • • Low drain-source ON r esistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: |Yfs| = 2 .5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA ) Unit: mm www.DataSheet4U.com Absolu te Maximum Ratings (Ta = 25°C) Charact eristics Drain-source voltage Drain-gat e voltage (RGS = 20 kΩ) Gate-source vo ltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tc h Tstg Rating 600 600 ±30 3.5 14 35 20 1 3.5 3.5 150 -55~150 A W mJ A mJ °C C Unit V V V 1: Gate 2: Drain 3: Sourc e Pulse (t = 1 ms) (Note 1) Drain pow er dissipation (Tc = 25°C) Single puls e avalanche energy (Note 2) Avalanche c urrent Repetitive avalanche energy (Not e 3) Channel temperature Storage temper ature range JEDEC JEITA TOSHIBA ― S C-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.
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