MRF6VP41KHSR6

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 20 dB Drain Efficiency — 64% Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 Watts Peak Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters CW Operation Capability with Adequate Cooling Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Designed for Push--Pull Operation Greater Negative Gate--Source Voltage Range for Improved Class C Operation In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. For R5 Tape and Reel option, see p. 17. Document Number: MRF6VP41KH Rev. 6, 4/2012 MRF6VP41KHR6 MRF6VP41KHSR6 10--500 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs CASE 375D--05, STYLE 1 NI--1230 MRF6VP41KHR6 CASE 375E--04, STYLE 1 NI--1230S MRF6VP41KHSR6 PARTS ARE PUSH--PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6, +10 Vdc Storage Tempera...